Fig. 1: Different electrical interfaces between atomically thin TMDSCs and metal leads.
From: Bridging the gap between atomically thin semiconductors and metal leads
a Interfacial band alignment of the van der Waals (vdW) contact. b Interfacial band alignment of the Schottky-limited contact. c Atomic configurations of [TM-C6] polyhedra and corresponding energy splitting diagrams of Mo/W d-orbitals before and after the local bonding distortion (LBD). d Interfacial band alignment of the contact utilizing LBD mechanism. EC and EV represent the energy of conduction and valence band edges in TMDSCs, respectively. EF indicates the Fermi-level energy in metal leads while ΦB denotes the Schottky barrier height. Blue arrows suggest the routes for carrier injection, where e− indicates the electron branch.
