Fig. 2: Mechanism of the referenced RIE technique.
From: Bridging the gap between atomically thin semiconductors and metal leads
Schematics showing the workflow of fabricating LBD contacts to BN-encapsulated TMDSCs in both edge- and top-contact geometries. After the soft oxygen plasma treatment, LBD appears on the exposed TMDSC edges or surface for the edge- and top-contact geometries, respectively.
