Fig. 4: Electrical performance of the 3L-MoS2 FET utilizing LBD contacts.
From: Bridging the gap between atomically thin semiconductors and metal leads
Two-probe Ids–Vds curves at (a) room temperature and (b) 2 K, respectively. c Contact resistance, Rc, extracted from the resistance difference between two-probe and four-probe measurements as the function of gate voltages, where the four-probe resistance is scaled by \(\frac{{{{{{{\rm{L}}}}}}}_{{{{{{\rm{out}}}}}}}}{{{{{{{\rm{L}}}}}}}_{{{{{{\rm{in}}}}}}}}\) as described in the Methods section and both resistance values in Ω·μm and Ω units are plotted in the logarithmic scale. It can be seen that the contact resistance depends little on the back gating after the device is fully turned on. The off-state of this device locates below −10 V back-gate voltage due to the natural electron doping of MoS2 as demonstrated in the inset of Fig. 4d. d Temperature-dependent field-effect mobility, μFE, derived from the channel conductance as the inset shows, showing the strong phonon scattering effects of 3L-MoS2 at high temperatures. \({\gamma }_{{FE}}\) represents the exponential temperature decay constant of the field-effect mobility.
