Fig. 5: Generality of the LBD strategy.
From: Bridging the gap between atomically thin semiconductors and metal leads
a Optical image of a typical 5L-WSe2 FET utilizing LBD contacts. The dash-dot line indicates the cutting position in the source, from which a cross-section membrane was lifted out as illustrated in b. c The low-magnification ADF image of the contact region. The area in the red-dash rectangle is zoomed in as d. d Atomic-resolution ADF image of the WSe2-LBD-metal junction observed along the WSe2 zig-zag direction. The orange dashed lines show the bottom of Ti layer. The LBD-starting region (white dashed rectangle) is analyzed below with the contrast re-surveyed, and the atomic model overlaid to clarify the distorted bonding. The overlaid blue and red dashed lines highlight the lattices of hexagonal WSe2 (H) and octahedral WSe2 (LBD), respectively. e Tow-probe Ids–Vds curves at varied temperatures. f Log-scale plot of field-effect and Hall mobilities as the function of temperatures. \({\gamma }_{{FE}}\) and \({\gamma }_{{Hall}}\) represent the exponential temperature decay constants of the field-effect and Hall mobilities, respectively. g Shubnikov de Haas (SdH) oscillations of the longitudinal channel resistance at low magnetic field strength down to ~0.4 T, indicating the high quantum mobility. The solid red line is averaged from the nearest 25 data points and the red arrow indicates the prominent onset position of SdH oscillations at ~0.4 T.
