Table 1 RIE conditions used in the contact fabrication.

From: Bridging the gap between atomically thin semiconductors and metal leads

Process

RF power and frequency

Gas composition

Pressure and flow rate

Substrate bias

Duration

Etching

200 W 13.56 MHz

CHF3:O2 = 10:1

Base pressure 6 mTorr; Flow rate 40:4 sccm

20 W

a5–15 s

Plasma treatment

100 W 13.56 MHz

O2 100%

Base pressure 6 mTorr; Flow rate 40 sccm

0 W

10 s

  1. aThe etching duration depends on the thickness of the top BN layer in the top-contact geometry or BN/TMDSC/BN stack in the edge-contact geometry.
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