Fig. 4: Characterization of single-crystal hBN and graphene films.
From: Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates
a SEM image of two aligned hBN domains merging together; samples were then transferred onto a TEM copper mesh. b The corresponding STEM-ADF image of the merging area around zone I. c The intensity profile measured at the marked position in I. d SAED measurements of the different positions around the merging area. e STM image of the grown single-crystal graphene film. f, LEEM and selected-area μLEED measurements of the single-crystal graphene grown on a twinned Cu foil (scale bar 3 μm). g Single crystal graphene film transferred to 4-inch SiO2/Si wafer. h Carrier mobility of holes and electrons from the single-crystal graphene-based FET test with different channel sizes (channel width 10 μm, length 50–2000 μm. The error bar is the standard deviation of raw data).
