Fig. 3: Photoelectric performance.

a Schematic diagram of the device used to measure the I–V curves of the sample. b I–V curve when the heterojunction irradiated by a laser with wavelength of 1064 nm. c ΔI–V curves of the heterojunction irradiated by lasers with wavelengths ranging from 375 nm to 118.8 μm. Photovoltage–time response curves of the AgNSF/CNTF sample irradiated by lasers with wavelengths of d 375 nm, 405 nm, 532 nm, 633 nm, 1064 nm, 10.6 μm and e 118.8 μm, respectively. f Photovoltage–position curve obtained when different positions of the sample were irradiated by a laser with wavelength of 532 nm and power of 236 mW, in which the position 0 mm is the central position of the heterojunction.