Fig. 1: Optical sensing and non-volatile multi-level storage characteristics.
From: Photo-induced non-volatile VO2 phase transition for neuromorphic ultraviolet sensors
a Schematic illustration of the neuromorphic transistor stimulated using 375 nm UV light. The VO2 film serves as a channel between the source (S) and drain (D) electrodes, and ionic liquid is used as a gating medium. b ID as a function of time under different light wavelengths (64 mW/cm2 for 60 s). c ID response to UV irradiation at different durations (84 mW/cm2 for 1 s, 10 s, 50 s, 100 s, 150 s, 200 s). d Spike-number-dependent plasticity under UV irradiation (84 mW/cm2 for 10 s). e Pulse-switching characteristics. The optical potentiation (84 mW/cm2 for 20 s) and electrical depression (−2.5 V for 20 s) were used for the switching process. ID was read 2 s after the light and voltage pulse stimuli. f Light-controlled LTP (light intensity 84 mW/cm2 for 10 s, spaced 10 s apart) and VG-controlled LTD (−1.5 V to −3.5 V, duration of 10 s, spaced 10 s apart) for 50 pulses. A constant source-drain voltage VSD = 50 mV was applied to monitor the channel current.
