Fig. 4: Device performance for VO2 film on silicon wafer.
From: Photo-induced non-volatile VO2 phase transition for neuromorphic ultraviolet sensors
a Photograph of the ch wafer. b I–V curves of 100 devices selected from the array. Inset: histogram of the devices’ resistance. c Histogram of the photo response after 100 s of UV irradiation (84 mW/cm2). The red line is the fitting curve of a Gauss function. d spike-duration-dependent plasticity (intensity of 84 mW/cm2) of a selected device. e Multi-state retention properties of VO2 devices. The potentiation states were produced via UV irradiation, while the depression states via electrolyte gating. The regulation time was 0.5 h and the retention time was 4000 s. f Relationship between ID and incident UV dose with data extracted from Supplementary Fig. 15. The red line is the fitting curve of a power function. A constant source-drain voltage VSD = 50 mV was applied to monitor the channel current.
