Fig. 4: Device characteristics of ANSL-based LEDs. | Nature Communications

Fig. 4: Device characteristics of ANSL-based LEDs.

From: Anisotropic nanocrystal superlattices overcoming intrinsic light outcoupling efficiency limit in perovskite quantum dot light-emitting diodes

Fig. 4

Representative device cross-section TEM image (a) and energy diagram (b) of our optimized device architecture, using the EML comprised of ANSLs of ANCs. Optimized LED current density J (c), luminance L (d), and external quantum efficiency ηext as a function of luminance L for the devices of (i) without (w/o) HTL, (ii) X-F6-TAPC HTL, and (iii) poly-TPD HTL (e). f Statistical distribution of peak ηext out of 65 LED devices. g Relative luminance as a function of time under continuous electrical stress at a constant current density of 0.5 mA cm-2, corresponding to initial luminance L0 of 276 and 125 cd m-2 for the optimized and control devices, respectively. h EL spectra and photographs for our large-area LEDs.

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