Fig. 2: Photoelectrochemical properties of Faradaic junction devices.
From: Photovoltage memory effect in a portable Faradaic junction solar rechargeable device
a I–t curve during photo charge and dark discharge under zero bias of the Si/CoOx/KBi(aq)/MnOx device. b Coulomb efficiency of the Si/CoOx/KBi(aq)/MnOx device during photo charge and dark discharge cycles. c Open circuit voltages of the Si/CoOx/KBi(aq)/MnOx Faradaic junction device and a commercial Si solar cell, and the photo charge and dark discharge were carried out in the Faradaic junction device by i-t curves without bias. d Photovoltages and dark output voltages of Si/CoOx/KBi(aq)/MnOx, Si/CoOx/KBi(aq)/CoOx and Si/CoOx/KBi(aq)/MoOx devices. e Areal charge quantities of photo charge and dark discharge in the three devices. f Dark output energy density of the three devices. The results in Fig. 2d–f show average values with the standard deviation as the error bar. Light source: 1 Sun of simulated solar illumination by a Xe lamp with AM 1.5 G filter (100 mW cm−2), electrolyte: KBi aqueous solution (0.2 M KOH and 0.4 M H3BO3) with pH = 9.
