Fig. 2: Effects of gradual oxygen concentration in TiOx switching layer. | Nature Communications

Fig. 2: Effects of gradual oxygen concentration in TiOx switching layer.

From: Experimental demonstration of highly reliable dynamic memristor for artificial neuron and neuromorphic computing

Fig. 2

a A cross-sectional TEM image of the gradual TiOx memristor. b TOF-SIMS depth profile results of anodized TiOx. c TOF-SIMS depth profile results of sputtered TiO2. d A schematic representation of the switching mechanism of the gradual TiOx memristor. e Size dependency of the gradual TiOx memristor. The memristors with four different sizes (5 × 5, 10 × 10, 20 × 20, and 50 × 50 [µm2]) are fabricated on the same wafer. The current is measured at 1 V at a low resistance state (LRS) during the linear voltage sweep from 0 V to 4 V. f An activation energy (EA) calculated from the time constant under various temperatures. The time constant decreased when the temperature increased, and the activation energy calculated from the change of the decay time along the temperature implies that the resistive switching and short-term dynamics originate from the oxygen anions in TiOx.

Back to article page