Fig. 5: FET measurements of 6.1 and 3.5 nm wide, PTCDA-derived nanoribbons.
From: Graphene nanoribbons initiated from molecularly derived seeds
a Nanoribbon FET architecture. b and c Source–drain current (Ids) versus source–gate bias (Vgs) at a source–drain bias (Vds) of −0.1 V for one champion (b) and three median (c) FETs for each nanoribbon width population. d Histograms of off-state conductance (Goff). The median off-state conductance improves by 2.2 orders of magnitude in the narrower ribbons. Purple and orange data correspond to nanoribbons with average widths of 6.1 and 3.5 nm, respectively.
