Fig. 5: Enhanced flexoelectric properties of the BTO3-δ membrane.
From: Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge
a Illustration of the experimental configuration of the c-AFM test. b AFM image of the transferred BTO3-δ film. c I–V curve of the Pt/BTO3-δ junction. d Evolution of the current as a function of loading force. e–h COMSOL FEM calculation with a tip-force model of the BTO3-δ film under applied force of 28 nN, 84 nN, 140 nN, and 196 nN, respectively. The colors of blue to red correspond to lower to higher strain values. The solid lines in the figures represent the equivalent strain value profile.
