Fig. 4: Pulsed current-induced magnetization switching of an ultrathin ZrTe2/CrTe2 heterostructure device and SOT characterizations of ZrTe2.
From: ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics
a Schematics of the SOT assisted magnetization switching in the ZrTe2/CrTe2 heterostructure and the writing and reading pulse current sequence. b Pulse current-induced magnetization switching of a ZrTe2 (8 u.c.)/CrTe2 (3 u.c.) at 50 K under an external magnetic field (700 Oe) applied in-plane parallel to the current direction. c ST-FMR spectrum of a ZrTe2/Py bilayer heterostructure at room temperature. Inset: Optical microscope image and schematic of the ST-FMR device. d, e DFT calculated band structure and spin Hall conductivity of ZrTe2 in the bulk and thin film form, respectively.
