Fig. 1: Architecture and device characteristics of the photodetector.
From: Organic donor-acceptor heterojunctions for high performance circularly polarized light detection
a Bilayer donor-acceptor heterojunction organic photodetector adopting a device configuration of self-encapsulated bottom-contact top-gate FET in which the chiral active layer and the organic semiconductor layer are NTPH-P thin film and DPA crystal, respectively. The molecular structures of the two chiral forms of the NTPH-P are shown on the right side. b gabs spectrum of 1-P and 1-M thin films on quartz substrates. c Transfer characteristics (recorded at VD = −60 V) of photodetector based on 1-P thin film and DPA crystal in dark (blue line) and upon exposure to RCPL (red line) and LCPL (black line) illumination at a wavelength of 556 nm. d, e Continuous electrical test (recorded at VD = −60 V, with VG switching from 10 V to −60 V) for the photodetector in dark (d) and under 556 nm illumination (e). f Optical switch characteristics of the photodetector under the illumination at a wavelength of 556 nm with the intensity of 84.88 mW cm−2.
