Fig. 1: OPD device characteristics at high-light intensity.
From: Light-intensity-dependent photoresponse time of organic photodetectors and its molecular origin
a Molecular structure of NP-SA and MPTA donors, with their donor and acceptor units indicated. The spatial conformation of donor molecules is illustrated based on the DFT optimized geometries shown as side views. b The responsivity at different bias conditions. c Dark and AM1.5 G light J–V curves in a semi-log plot, shown with darker and brighter colors respectively. d The bandwidth of frequency response measured at a light intensity of 0.7 mW/cm2 at 0 V. e Light-off photocurrent transient at the light intensity range of 0.6–2.2 mW/cm2 illumination at 0 V, the device was illuminated for 100 ms before switching off the light, the background current level is higher than the dark current of the device due to the sensitivity limitation of the detector circuit (50 Ω load resistance, 1 mV/div of the oscilloscope). f Effective charge carrier mobilities as a function of charge carrier densities analyzed by charge extraction (CE) at 0 V at the light intensity range of 0.5–100 mW/cm2. g Normalized plots of the charge carrier density at open circuit versus open circuit voltage determined from integration of charge extraction transients as a function of light irradiation intensity (data normalized at 200 mW/cm2 light intensity).
