Fig. 3: EL intensity-voltage characteristics at near- and sub-bandgap voltages for different LEDs. | Nature Communications

Fig. 3: EL intensity-voltage characteristics at near- and sub-bandgap voltages for different LEDs.

From: Ultralow-voltage operation of light-emitting diodes

Fig. 3

a Perovskite LEDs based on FPI, NFPI and PCPB. b Organic LEDs based on Ir(ppy)3, FIrpic, 4CzIPN, rubrene and F8BT. c II–VI QLED based on CdSe/ZnS QDs. d III–V inorganic LEDs based on InGaAsP, GaAs, AlGaAs, InAlGaP, GaAsP, GaP, AlGaP and GaN. e Collection of EL intensity-voltage curves for different classes of LEDs in the same panel. f Measured qVm/Eg of different classes of LEDs. The shaded area denotes the region where the measured qVm/Eg falls below the limits set by TTA or Auger processes. g Dark saturation current densities (j0) of different classes of LEDs. h j0exp(Eg/kT) of different classes of LEDs. i Vm versu j0 for different classes of LEDs. Vm is the measured minimum voltage for detectable EL.

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