Fig. 2: Valence electronic structure of HfSe2. | Nature Communications

Fig. 2: Valence electronic structure of HfSe2.

From: Hidden spin-orbital texture at the \(\overline{{{\Gamma }}}\)-located valence band maximum of a transition metal dichalcogenide semiconductor

Fig. 2

a Bulk and surface Brillouin zone (SBZ) schematics with high symmetry points labelled. The surface plane lies perpendicular to the kz direction. b kz dispersion formed from a photon energy dependent dataset ranging from hν = 17–64 eV (see Methods). The rectangle indicates the energy and kz range for the zoom-in in c. Orange dashed lines indicate the photon energies corresponding to the dispersions in d–g. c Zoom-in over the range indicated in (b). Solid lines are orbital-projected DFT calculations, re-scaled in energy by 25%, and offset in (kz,EB) by (0.07 Å−1, −1.15 eV) in order to optimally match the experimental data in the low hν, low binding energy region. Colour is indicated to the right of the image. The irreducible representation for each band is labelled, along with the hybridisation gap (HG). d–g Dispersions along the \(\overline{{{{{{{{\rm{K}}}}}}}}}\)-\(\overline{{{\Gamma }}}\)-\(\overline{{{{{{{{\rm{K}}}}}}}}}\) direction for photon energies of d 22 eV (A-plane) (e) 25.5 eV (f) 29 eV and g 32 eV (Γ-plane). 25.5 eV probes the kz where the hybridisation gap is formed. Note the lack of a visible surface state occupying the gap. All intensity scales run from low (white) to high (black).

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