Fig. 3: Apparent TRS breaking in HfSe2. | Nature Communications

Fig. 3: Apparent TRS breaking in HfSe2.

From: Hidden spin-orbital texture at the \(\overline{{{\Gamma }}}\)-located valence band maximum of a transition metal dichalcogenide semiconductor

Fig. 3

a spin-EDCs (hν = 29 eV) for the x (∥kx) and z components of spin for two k points indicated in the central ARPES spectrum taken along the \(\overline{{{\Gamma }}}\)-\(\overline{{{{{{{{\rm{M}}}}}}}}}\) direction. The intensity scale for the central ARPES image ranges between low (white) to high (black). b, c Extracted spin-polarisation for spin EDCs taken at kx = ky = 0 as a function of kz for the c x and b z components. A spin-integrated photon energy dependence over the same E-hν range is used as an intensity filter (note the two-dimensional colour bar). Five pairs spin-resolved EDCs and eight spin-integrated EDCs were used to generate each spin-resolved image. The horizontal (h\(\nu\)) axes run from 17 (left) to 24 eV (right). d Select spin-EDCs for the x and z components for 17, 20.5, 29, and 39eV incident photons, from left to right. The analyser slit is defined as parallel to the kx direction for all measurements here.

Back to article page