Fig. 2: Transistor characteristics of a 2L-WS2/4L InSe device.
From: Light sources with bias tunable spectrum based on van der Waals interface transistors
a Room-temperature transfer curve (ISD-vs.-VG at fixed VSD = 50 mV) of a 2L-WS2/4L-Inse. b The high device quality is evidenced by the low subthreshold swings for electron and hole transport, whose values (115 mV/decade and 90 mV/decade, respectively, for this specific transistor) are close to the ultimate limit of 60 mV/decade. c and d Output characteristics (ISD as function of VSD) of the same device for different negative and positive gate biases, respectively. Linear, saturation, and ambipolar injection regimes can be clearly identified upon increasing the magnitude of VSD, as described in the main text (see also Supplementary section 1).
