Fig. 2: Ferroelectric evolution of BTO before and after transferring.
From: Nonvolatile ferroelectric domain wall memory integrated on silicon
a, c Vertical (out-of-plane) and lateral (in-plane) PFM domain switching results for as-grown 30 u.c. BTO/SAO/STO and 30 u.c. BTO/Si. Bias voltages of ±20 V and ±13 V are applied in a and c, respectively. The blue box and green box areas are scanned by a dc bias tip with positive and negative voltages, respectively. Schematics below c illustrate the trailing field method for in-plane polarization switching54,55. b, d Local phase hysteresis loops and amplitude butterfly curves obtained from out-of-plane signal of 30 u.c. BTO/SAO/STO in a and in-plane signal of 30 u.c. BTO/Si in c, respectively.
