Fig. 3: Structural transition of BTO.
From: Nonvolatile ferroelectric domain wall memory integrated on silicon
a Lattice constants of BTO at different thicknesses before and after transferring. Bulk BTO lattice constants are offered for comparison in a. b, c RSM around (b) (002)- and c (103)-diffraction peaks. The mappings are based on a cubic structure with lattice constant of 0.4 nm. r.l.u., relative light units. Different parts of the peaks represent different domains, illustrated in detail by the arrows. Error bars are drawn considering instrument precision and accidental errors. d, e Qualitative potential diagram along [001] for BTO/SAO/STO in d and BTO/Si in e. Out-of-plane polarization directions are shown for both cases to clarify the c-axis polarization variation. f, g Qualitative in-plane potential diagrams for BTO/SAO/STO in f and BTO/Si in g.
