Fig. 3: Electron crystal.
From: Imaging topological and correlated insulating states in twisted monolayer-bilayer graphene
a Schematic drawing shows filling sequences of ABB, ABA, and ABC regions as a function of global fillings \(\nu\) that is listed on the left. The dashed lines indicate the EF at each filling factor. The red (blue) ovals represent the CFB with (without) electrons occupation. b Summarized charge redistribution and the electron crystal from Figs. 2 and 3. Red (gray) circles superposed on three high-symmetry regions indicate the positions fully (partially) occupied by electrons. c–f Extracted local filling ratio, R, from every dI/dV curve in dI/dV maps for different filling factors \(\nu =0\) (c), \(\nu =1\) (d), \(\nu =2\) (e), \(\nu =3\) (f), and \(\nu =4\) (inset of f) (Vb = −100 mV, I = 200 pA). The inset in c shows topography simultaneously obtained during dI/dV maps, which can offer the structure of the moirĂ© superlattice and the position of three high-symmetry regions (white dotted rhombus structures in c–f). The red (gray) circles superposed on these maps represent areas with full (partial) filling, which have similar superstructures with those in (b). The color bar shows the local filling ratio (R) from 0 to 1.
