Fig. 2: Supercurrent diode effect versus in- and out-of-plane field.

a The color plot shows \(Q\equiv 2({I}_{c}^{+}-| {I}_{c}^{-}| )/({I}_{c}^{+}+| {I}_{c}^{-}| )\) as a function of out-of-plane (B_z) and in-plane (B_ip) field, measured in sample F for θ = 90^∘ (i.e., for B_ip⊥I). B_z here includes both the field produced by the orthogonal coils and the finite z-component of B_ip arising due to misalignment. Red and blue arrows indicate the areas where the diode effect is enhanced. b Similar measurements, but for θ = 0^∘. c As in (b), but for θ = −90^∘. Notice that this graph can be mapped onto that in (a), provided that B_ip → −B_ip. The color contrast is the same in (a), (b) and (c). d Absolute value of \({I}_{c}^{+}\) (black) and \({I}_{c}^{-}\) (red) plotted versus B_z, for B_ip = 0 and for the sample orientation θ = −90^∘. e As in (d), but for B_ip = 2 T. Note that data in (d, e) were measured in a different session (with higher resolution in B_z) compared to data in c. f Supercurrent rectification efficiency Q as a function of B_z at θ = −90^∘ for B_ip = −2 T (green), 0 T (gray), and 2 T (magenta). Here, we used the same data as in panel c, for B_ip values indicated in the legend. For B_ip = 0 we have substituted three outliers (for B_z = −48, −64 and −80 mT) with the corresponding values for the adjacent in-plane field B_ip = −0.25 T. For B_ip = −2 T we have substituted one outlier (for B_z = −43 mT) with the corresponding value for the adjacent in-plane field B_ip = −1.75 T, see Supplementary Information. Outliers are also visible in panels (a–c). All measurements reported in this figure were performed at 500 mK.