Fig. 4: Molecular orbital gating in a single-molecule device.
From: Precise electrical gating of the single-molecule Mizoroki-Heck reaction
a Schematic of a single-molecule device with an ionic liquid gate electrode (connected with a remote metal gate electrode) for the Mizoroki–Heck reaction. Ionic liquid: 1-butyl-3-methylimidazolium tetrafluoroborate. b Photograph of a real device with metal gate electrodes. Inset: enlarged area of the device. c I–V curves measured for different values of VG based on a Pd(0) GMG-SMJ. d Fowler–Nordheim plots corresponding to the I–V curves in c. The arrows indicate the boundaries between transport regimes (corresponding to Vtrans). e Linear fit of Vtrans versus VG. α: gate efficiency factor. The error scales were derived from the statistics of four different devices. f Energetic diagram of the alignment of molecular orbitals relative to the graphene Fermi level in Pd(0) single-molecule transistors under different gate voltages. Effective molecular orbital gating energy, eVG,eff = e│α│VG. LUMO lowest unoccupied molecular orbital, HOMO highest occupied molecular orbital.
