Fig. 3: Magneto-transport measurements and thickness-dependent anomalous Hall device performances in single-sheet Fe3GaTe2 nanosheets. | Nature Communications

Fig. 3: Magneto-transport measurements and thickness-dependent anomalous Hall device performances in single-sheet Fe3GaTe2 nanosheets.

From: Above-room-temperature strong intrinsic ferromagnetism in 2D van der Waals Fe3GaTe2 with large perpendicular magnetic anisotropy

Fig. 3

a Schematic and measurement geometry of the Fe3GaTe2 Hall device. b Optical image and height profile of the few-layer Fe3GaTe2 Hall device. c Temperature-dependent longitudinal resistance of Fe3GaTe2 nanosheets with different thickness. Longitudinal resistance are normalized by their values at 300 K. Hall resistance (Rxy) at 3 K (d) and at 300 K (e) obtained in Fe3GaTe2 nanosheets with different thickness. f High temperature (>300 K) AHE in 9.5 nm few-layer Fe3GaTe2. g Normalized remanent anomalous Hall resistance (Rrxy) as a function of temperature in Fe3GaTe2 nanosheets with different thickness. Rrxy data are normalized by their values at 3 K. Inset shows the enlarged image from 340 to 390 K and the arrows mark the TC. Error bars s.d., N = 25.

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