Fig. 4: OFET device performance.
From: Light-responsive self-strained organic semiconductor for large flexible OFET sensing array
a–d are the transfer and output curves of AZO-BTBT-8 before and after UV irradiation on flexible PET, respectively. IDS, source-drain current; VDS, source-drain voltage; VG, gate voltage. The average mobility increased from 0.015 ± 0.007 cm2 V−1 s−1 (a and b without UV irradiation) to 0.141 ± 0.009 cm2 V−1 s−1 (c and d with UV irradiation) on over 30 individual devices. The average on/off ratio is approximately105. L = 30 μm and W = 130 μm. e IDS of the OFET device under various mechanical distortions. The inset shows the transfer curves of the same device under different bending conditions. S, strain calculated according to Supplementary equation 7 and 8. f Endurance cycles show the device’s stability before UV irradiation on flexible PET. g Time trace of IDS for the same device showing the reversible photoswitching events under alternating UV and Vis irradiation. h Comparison of IDS attenuation at different temperatures and under Vis irradiation. VDS = −25 V, VG = −25 V. UV = ultraviolet (λ = 365 nm), Vis = visible (λ ≥ 420 nm).
