Fig. 1: Structural and optical properties of NaBiS2 NC films. | Nature Communications

Fig. 1: Structural and optical properties of NaBiS2 NC films.

From: Strong absorption and ultrafast localisation in NaBiS2 nanocrystals with slow charge-carrier recombination

Fig. 1

a X-ray diffraction (XRD) patterns of NaBiS2 nanocrystals (NCs) synthesized at 80 °C and 150 °C compared with the reference pattern for the disordered rocksalt (Fm\(\bar{3}\)m) phase of NaBiS228. b XRD patterns and photographs of NaBiS2 NC films synthesized at 150 °C on the same day of preparation (Day 0) and after 112 days (Day 112) of storage in ambient air (60–70% relative humidity). c Absorption coefficient (α) spectrum of the NaBiS2 NC film compared with other PV absorbers. d Spectroscopic Limited Maximum Efficiency (SLME) of various 30 nm-thick PV absorbers compared with the Shockley-Queisser limit (SQ limit, black line). The hollow and solid circles for NaBiS2 and AgBiS2 refer to the corresponding SLMEs without and with consideration of non-radiative losses owing to indirect bandgaps (details in Supplementary Note 1). The absorption coefficient spectrum used in (c and d) for the PV absorbers other than NaBiS2 are extracted from refs. 14,74,75,76,77,78,79,80. Theoretical and experimental (Exp.) orbital-projected electronic density of states (DOS) for disordered Fm\(\bar{3}\)m e NaBiS2 and f AgBiS2. Theoretical DOS were calculated using hybrid DFT including spin-orbit interactions (HSE06+SOC) via the Special Quasirandom Structure (SQS) supercell approach. The energy of the highest occupied state is set to 0 eV. Experimental DOS were acquired from photoelectron yield spectroscopy (PYS) measurements on AgBiS2 and NaBiS2 NC films in the same experimental environment. The area under the partial DOS for atomic orbitals, as well as the total DOS are shaded for clarity.

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