Fig. 1: Optimisation of Cu2O by varying the oxygen fraction.
From: Chemical deposition of Cu2O films with ultra-low resistivity: correlation with the defect landscape
a Schematic of the AP-SALD system used for the deposition of Cu2O thin films with the distribution of the flows inside the head (Yellow color corresponds to the (Cu(hfac)(cod)) precursor, the orange color corresponds to the water flow, and the blue color corresponds to the mixture of the nitrogen and oxygen flow). b Schematic view of the cross-section of the gap between the head bottom and the substrate. c Growth rate and thickness variation of Cu2O samples deposited at 220 °C on a glass substrate. d Van der Pauw measurements of Cu2O samples deposited at 220 °C and 260 °C with different oxygen fractions. Error bars represent min/max values obtained for each point from two different deposition runs.
