Fig. 4: PAS results.
From: Chemical deposition of Cu2O films with ultra-low resistivity: correlation with the defect landscape
a Lifetime components and b Schematic model of previously reported point defects in Cu2O and of much larger complex defects that are expected (after our DFT calculations) to be at the origin of the large positron lifetimes observed in the PALS experiments: copper vacancy in the normal and split configuration (VCu, VCu,split), oxygen vacancy (VO), and complex defects “V2Cu−V2O”, “V2Cu−VCu,split-VO” (Blue and red atoms represent the Cu and O atoms, respectively—Vesta), c Relative intensities for three different oxygen fractions: 0%, 5%, 15% at 260 °C for 3000 ALD cycles, d Normalized photoluminescence measurements displaying exciton, oxygen and copper vacancies, for three different oxygen fractions: 0%, 5%, 15% at 260 °C, and e S(Ep) and VEPfit fitted59. S(Ep) dependencies for 220 °C (38 nm thick) and 260 °C (100 nm-thick) film series deposited on a glass substrate with different oxygen fractions (0%, 5%, and 15%).
