Table.1 Calculated using VEPfit code59 S-parameter, effective diffusion length, L+, and estimated weighted average overall vacancy defects concentration of Cu2O film with a different oxygen fraction at 260 °C
From: Chemical deposition of Cu2O films with ultra-low resistivity: correlation with the defect landscape
Sample ID | S-parameter | Diffusion length L+ (nm) | Estimated defect concentration (CV x 10−5) |
|---|---|---|---|
0% | 0.561(1) | 3 ± 5 | 472 |
5% | 0.523 (5) | 25 ± 8 | 6.66 |
15% | 0.516 (4) | 31 ± 5 | 4.28 |
