Fig. 3: Calculated electronic band structure and Berry curvature of bilayer and trilayer MoTe₂.

a, b Band structure of the MoTe₂ T_d bilayer (a) and trilayer (b), respectively. The small triangle in a indicates \({{{{{{\bf{k}}}}}}}_{{{{{{\rm{x}}}}}}}=0.2034\frac{2\pi }{a}\) through which the band path of inset passes. The inset in a show the crossing points in the bands along the path connecting two points \((0.2034\frac{2\pi }{a},\pm 0.0228\frac{2\pi }{b})\) which is perpendicular to ΓΧ line. The small circle in b indicates the anti-crossing point that is magnified in b. c–f (c) and (e) shows Berry curvature (z-component) distribution in momentum space at specific energy levels (0.28 and 0.24 eV) for MoTe₂ bilayer and trilayer, respectively. The black solid lines are Fermi lines. d and f are the zoom-in of Berry curvature near corresponding crossing/anti-crossing points in the areas defined by intervals \({{{{{{\bf{k}}}}}}}_{{{{{{\rm{x}}}}}}}\in \left[0.16\frac{2\pi }{a},0.24\frac{2\pi }{a}\right]\) and \({{{{{{\bf{k}}}}}}}_{{{{{{\rm{y}}}}}}}\in \left[-0.04\frac{2\pi }{b},0.04\frac{2\pi }{b}\right]\) for d and \({{{{{{\bf{k}}}}}}}_{{{{{{\rm{x}}}}}}}\in \left[0.075\frac{2\pi }{a},0.155\frac{2\pi }{a}\right]\) and \({{{{{{\bf{k}}}}}}}_{{{{{{\rm{y}}}}}}}\in \left[-0.04\frac{2\pi }{b},0.04\frac{2\pi }{b}\right]\) for f. g, h Berry curvature dipole as function of chemical potential for bilayer (g) and trilayer (h), respectively. Dotted lines in g and h denotes Fermi energy of 0.28 eV and 0.24 eV for bilayer and trilayer samples, respectively.