Table 1 Parameters used for simultaneous rate equations model

From: Chip-scale high-peak-power semiconductor/solid-state vertically integrated laser

Symbol

Parameter

Value

ηi

Carrier injection efficiency

0.99

Ioff

Offset current

0.49 A

G0

Initial gain coefficient

2.6 × 105 s−1

N0

Carrier transparency number

1.8 × 105

β

Spontaneous emission coefficient

6.9 × 10−17

ε

Gain compression coefficient

9.9 × 10−28

k

Scale-factor of the output coupling efficiency

1.0 × 10−7 W

τn

Carrier lifetime in the VECSEL cavity

9.9 × 10−9 s

τp

Photon lifetime in the VECSEL cavity

9.8 × 10−12 s

I

Injected current

0.91 A

lsub

Length of the GaAs substrate

0.1 mm

tV= 2(nsublsub + nYAGlg)/c

VECSEL external cavity round-trip time

8.4 × 10−12 s

AYb

Single-pass absorption rate of Yb:YAG

18.1%

σg

Stimulated emission cross section of Yb:YAG

2.2 × 10−20 cm2

σSA

Ground-state absorption cross section of Cr:YAG

4.6 × 10−18 cm2

σESA

Excited-state absorption cross section of Cr:YAG

8.2 × 10−19 cm2

lg

Length of Yb:YAG

0.5 mm

lSA

Length of Cr:YAG

0.2 mm

NSAi = −ln(T02)/(2σSAlSA)

Total population density of Cr:YAG

5.6 × 1017 cm−3

tr= 2nYAG (lg+lSA)/c

Q-switched laser cavity round-trip time

8.5 × 10−12 s

τg

Lifetime of the upper laser level of Yb:YAG

9.5 × 10−4 s

τSA

Excited-state lifetime of Cr:YAG

3.4 × 10−6 s

γg

Inversion reduction factor of Yb:YAG

2

Ni

Total population density of Yb:YAG

5.5 × 1020 cm−3

hc/λp

Photon energy

2.1 × 10−19 J

λp

Pumping wavelength

940 nm

F

Intensity adjustment factor

2.9

D

Diameter of pumping laser

0.16 mm

V=π(D/2)2 × lg

Pumping volume

1.0 × 10−2 mm3

L

Nonsaturable round-trip dissipative optical loss

0.05

c

Vacuum speed of light

3.0 × 108 m/s

q

Elementary charge

1.6 × 10−19 C

nsub

Refractive index of the GaAs substrate

3.55

nYAG

Refractive index of the laser crystal

1.82

ROC

Reflectance of the OC

85%

T0

Initial transmittance of Cr:YAG

95%