Fig. 1: The characterization of MnBi2Te4 devices. | Nature Communications

Fig. 1: The characterization of MnBi2Te4 devices.

From: Controlled large non-reciprocal charge transport in an intrinsic magnetic topological insulator MnBi2Te4

Fig. 1

a The schematic structure of the MnBi2Te4 device. The MnBi2Te4 thin flakes are obtained by Al2O3-assisted exfoliation method. Au electrodes are thermally deposited through stencil masks. Si/SiO2 and graphite/hBN work as bottom and top gate, respectively. b The temperature-dependent resistance of a 5-SL MnBi2Te4 (Device 1) device. The Néel temperature (TN) is indicated by a resistance peak around 23 K. c, d The transverse and longitudinal resistance as a function of the magnetic field at 1.7 K for Device 1. A top gate voltage of −2 V is applied to tune the Fermi energy to the charge neutrality point.

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