Fig. 3: Non-reciprocal charge transport in 5-SL MnBi2Te4 and 4-SL MnBi2Te4.

a Magnetic field dependent non-reciprocity for a 5-SL MnBi2Te4 device. A top gate voltage of 3 V is applied, and the sample is slightly electron doped. Insets show the schematic illustrations of two magnetic states under zero magnetic field. b Magnetic field dependent non-reciprocity for a 4-SL MnBi2Te4 device. The AC driven current IRMS = 1 μA is adopted in measurements. The measurements are performed at the temperature of 11 K. A top gate voltage of 3 V is applied, and the sample is slightly electron doped. Insets show schematic illustrations of two magnetic states under zero magnetic field.