Fig. 1: Synergistic control of the carrier and phonon transports via defect engineering.
From: Evolution of defect structures leading to high ZT in GeTe-based thermoelectric materials
a The schematic diagram presenting the behaviors of carriers and phonons in the GeTe-based compounds with the presence of hierarchical structures. b The weighted mobility μw and the value of μw/κL of Ge-deficient samples sintered at 873 K at the room temperature, as compared with samples sintered at 723 K. c ZT value as a function of reduced Fermi potential with different quality factors at 648 K.
