Fig. 3: Lattice thermal conductivity and Debye-Callaway model prediction.
From: Evolution of defect structures leading to high ZT in GeTe-based thermoelectric materials
a Temperature-dependent κL for the BixGe0.97–xTe-723 and BixGe0.97–xTe-873 samples, respectively. b The comparison of κL at room temperature for the BixGe0.97–xTe-723 and BixGe0.97–xTe-873 samples. c Temperature-dependent κL for the Bi0.07Ge0.90Te-723 and Bi0.07Ge0.90Te-873 samples (symbols). The lines showing the prediction κL for Bi0.07Ge0.90Te-723 and Bi0.07Ge0.90Te-873 samples. d Calculated κs using the Debye-Callaway model with different scattering mechanisms including the Umklapp process scattering (U), grain boundary scattering (B), point defect scattering (PD), dislocation scattering (D), planar vacancy scattering (PV), domain boundary scattering (DB) at 300 K.
