Fig. 3: Metallic behavior of PVD-synthesized 2D p-doped SnSe.
From: Two-dimensional multiferroic material of metallic p-doped SnSe
a Output characteristic curves of SnSe, collected both along 1–2 and 3–4 directions. Inset is the corresponding OM image of a back-gate device. b Transfer characteristic curves of the SnSe back-gate device. c Temperature-dependent longitudinal resistance of SnSe (with the thickness of ~46 nm). Inset is the corresponding OM image of a Hall bar device. d XPS spectrum of transferred 2D p-doped SnSe nanosheets on SiO2/Si, showing the coexistence of Sn2+ and Sn4+. e Raman spectra captured from four random positions in Ar plasma treated sample. The characteristic peaks of SnSe2 are indicated by the black circle. Inset is the corresponding OM image. f, g Calculated band structure and energy band diagram of SnSe/SnSe2. h Differential charge density of SnSe/SnSe2 (isosurface value of 0.001 e/A3). Yellow and blue isosurface contours represent the charge accumulation and depletion, respectively.
