Fig. 3: The charge carriers’ transport in spray-coated thick film and narrow-band photodetector.
From: Spray-coated perovskite hemispherical photodetector featuring narrow-band and wide-angle imaging
a Schematic diagram of the perovskites (PEA2FAn-1PbnX3n+1) films fabricated by spray-coating. The recombination occurs at the grain boundary (2D region), selectively collecting long wavelength-generated carriers and narrow-band response. b The TRPL spectra of PEA2FA3Pb4I13 (τ = 33.14 ns) and FAPbI3 (τ = 54.48 ns) fabricated by spray-coating. c The device structure to analyze the influent of narrow-band response photosensitive layer. d The EQE value of devices (film thickness: 16 μm) based on perovskites with different n value. e The EQE value of devices based on PEA2FA3Pb4I13 films of different thickness (2 μm, 4 μm, 8 μm, 12 μm, and 16 μm). f The μτ product of PEA2FA3Pb4I13 and FAPbI3 films fabricated by spray-coating. g The charges density of PEA2FA3Pb4I13 film at different wavelength and positions simulated by diffusion length and absorbance spectrum. h The narrow-band response (EQE) of perovskites photodetectors with different halogen ratio (PEA2FA3Pb4I13, PEA2FA3Pb4I8Br5, PEA2FA3Pb4I5Br8, and PEA2FA3Pb4Br13).
