Fig. 2: Measured field enhancement and data analysis.
From: Strongly enhanced THz generation enabled by a graphene hot-carrier fast lane
a Time-resolved measurement of received field amplitude under different channel bias, with pump power of 3 mW and probe power of 10 mW. Violet to red (following the gray arrow): channel bias = 1 to 9 V with a 1 V stepped increase. Pink: graphene-free device at 9 V. b Gain of generation (measured in power) compared to graphene-free device at identical test conditions. The power gain varies from 19 to 38 dB at different channel bias and pump power (pump powers marked in the graph, unit: mW). c Extracted rise and fall times of the pulses with \(\tau\) value from least-square-regression Gaussian fitting. Red: rise time, graphene on silicon device; orange: fall time, graphene on silicon device; navy: rise time, silicon device; blue: fall time, silicon device. d Fourier-transformed THz spectrum of graphene device (red dot) and graphene-free device (blue circle). The data in c and d are extracted from a, which shows no decrease in bandwidth or SNR.
