Fig. 1: Compliant substrate realized using patterned Si(001) porous substrate.
From: Defect free strain relaxation of microcrystals on mesoporous patterned silicon
a Cross-section SEM image of 10 μm tall deeply patterned silicon wafer using Bosch process. b Cross-section SEM image of the bottom part of anodized silicon pillars, the upper part of the porous Si pillars cannot be observed by SEM due to the screening effect coming from the Ge deposition on the lateral surface and the cleavage, however the TEM analysis reported in the Supplementary Material shows the reorganized porous structure over the entire Si pillar. c, d 2 μm tall self-limited Ge microcrystals grown at 500 °C by chemical beam epitaxy using Ge solid source on SiP (c) and on PSiP (70%) (d).
