Fig. 2: STEM characterization of Ge microcrystals along the <110> zone axis.
From: Defect free strain relaxation of microcrystals on mesoporous patterned silicon
a, b Top-view SEM image of Ge/SiP (a) and Ge/PSiP(70%) (b) after Etch-pit (EP) method. c,d, Low magnification BF-TEM images of the Ge/SiP reference substrate (c) and of the defect-free germanium grow on Porous silicon pillar (PSiP) (d). e High-resolution STEM image of the Ge/Si interface with threading dislocations and misfit network. f Atomic resolution STEM image of the Ge/PSiP interface.
