Fig. 1: Pulse-induced migration of Σ3{112} ITB in an Au nanocrystal.
From: Revealing the pulse-induced electroplasticity by decoupling electron wind force
a Atomic image of a Σ3{112} incoherent twin boundary (ITB). Inset is the Fast Fourier-filtered (FFT) image, showing a typical twin structure. b Atomic structure of the Σ3{112} ITB, consisting of Shockley partials b1, b2, and b3 on {111} planes. The red atoms represent the stacking faults bonded by the Shockley partials of the ITB. c Schematic of the experimental setup. d–g Generation, migration, and annihilation of ITBs in an Au nanocrystal under the sequentially-applied individual pulse of (1.7 V, 3 ns). CTBs (coherent twin boundaries) and ITBs are marked by the white solid and dash lines, respectively. The green arrow in e indicates the direction of the conventional electrical current, opposite to the direction of drift electrons. The yellow arrows in e and f represent the migration directions of ITBs.
