Fig. 9: Electro-mechanical interface.
From: Ultra-low-noise microwave to optics conversion in gallium phosphide
a The evolution in the electro-optic scattering parameter as the device temperature is increased from 20 mK up to 9 K. Displayed are the signal sizes for the modes at 2.790 and 2.799 GHz. b The phase of the reflected signal from the microwave port of the device for the same temperature range. This data was recorded simultaneously with the electro-optic data in a. The dotted curve is a fit to the impedance-matching circuit resonance frequency, from the BCS theory of kinetic inductance as the film approaches the critical temperature.
