Fig. 2: Analysis of back-bias RFET device physics.
From: Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor
a, b p-type and n-type transfer characteristics in the temperature range from 25 to 125 °C, respectively. c Fitting of the measured transfer characteristics by TCAD simulations using a process simulation approach. d, e Band diagrams for a ∣VDS∣ of 1.5 V for p-type (red, VBB = –4.0 V) and n-type (blue, VBB = 4.6 V) program, respectively. Solid lines represent ON-states, dashed lines represent OFF-states. Potential along the channel is given relative to the overall channel length L. f Extracted effective barrier values from both TCAD simulations and temperature-dependent measurements in the on- and off-states, respectively. A fixed tunneling distance deff of 2.8 nm was used to yield simulation results. Both methods agree qualitatively good. Lines are guides to the eye.
