Fig. 2: Intrinsically stretchable transistors fabricated using the OCSC n-type hybrid polymer semiconductor films.

a Device structure of the STOFETs with channel length/width of 200 µm/4 mm and dielectric thickness of about 2000 nm. b Images showing the skin-like characteristics of the stretchable transistor. c A typical transfer curve (V_DS = 60 V, with V_DS representing drain voltage) from the STOFET device fabricated using the OCSC n-type hybrid polymer semiconductor films in its initial condition. d A typical output characteristic obtained from the OCSC n-type hybrid polymer semiconductor films. e Distribution of the carrier mobility from 20 devices in a fully stretchable transistor array. f The real ‘working lifetime‘ of the STOFETs with the n-type hybrid semiconductor film stored for ~6 month in a nitrogen-filled glove box without any encapsulation. g Changes in the on current and mobility [calculated with measured geometry and dielectric capacitance under strain (Supplementary Table 2 and Supplementary Fig. 18); also for the values in h] with strains up to 100%, both parallel to and perpendicular to the charge transport direction. h Changes in the STOFET characteristics (including on current and mobility) after multiple stretching-releasing cycles (up to 1000 cycles) at 25% strain along the charge-transporting direction.