Fig. 4: X-ray imaging of the intrinsically stretchable n-type semiconductor films.

a Images showing high transparency and stretchability of the hybrid semiconductor film. b The dark current and c the X-ray photocurrent extracted from 16 working devices, respectively. All the devices biased at V_DS = 60 V (V_G = 0 V), were irradiated with a dose rate of 3.5 μGy_air s⁻¹. d Schematic representation of the single-pixel scanning imaging devices (Al foil with 4.8 mm thickness worked as the attenuator). e Photograph of a hexagonal nut with sides of 5 mm length. f Experimental results of the imaged object under X-rays of 25 keV with a dose rate of 3.65 μGy_air s⁻¹. The imaging device were biased at V_DS = 10 V (V_G = 0 V).