Fig. 2: Crystallization time as a function of laser pulse duration for the as-deposited, 3 and 6 h annealed Ge15Sb85 films.
From: Highly tunable β-relaxation enables the tailoring of crystallization in phase-change materials
a Power-time-effects (PTE) diagrams of the as-deposited, 3 and 6 h annealed Ge15Sb85 thin films. The x-axis and y-axis represent the pulse duration t (ns) and power P (mW), respectively. The reflectance contrast ΔR is encoded in the color bar. b The probability of crystallization as a function of pulse duration during a fine pulse duration scan at a constant power of ~40 mW. The fitted curves are based on the Gompertz function, and the standard deviation for the as-deposited, annealed at 458 K for 3 h, and for 6 h films are 3.52, 1.85, and 3.51%, respectively (Supplementary Fig. 3). The vertical lines represent the deduced characteristic time tmin. The pre-annealing increases the tmin of Ge15Sb85 by around one order of magnitude.
