Fig. 3: Kissinger plots for the crystallization processes of Ge15Sb85 and Ge15Te85.
From: Highly tunable β-relaxation enables the tailoring of crystallization in phase-change materials
The crystallization peak temperatures Tp at low and high heating rates Q are measured by DSC (open symbols) and ultrafast Flash DSC (solid symbols), respectively. a Crystallization of as-deposited Ge15Sb85, and the samples annealed for 3 and 6 h at 458 K. The error bars are the standard deviations of averaging ten times of measurements (see “Methods” and Supplementary Table 1). b Crystallization of as-deposited Ge15Te85 and the sample annealed for 6 h at 382 K. The error bars are estimated less than 0.3% within the size of the symbols. c The difference in Tp between the annealed and as-deposited samples of Ge15Sb85 and Ge15Te85 for different heating rates Q. The error bars are calculated based on the error propagation from (a) and (b).
